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Quad DMOS Analog Switch Driver
CORPORATION
"Improved Performance Over SD5000N and SD5400CY"
SD5300
FEATURES DESCRIPTION 1ns The Calogic SD5300 is a monolithic array of 20V enhancement-mode DMOS FET analog switch drivers. The SD5300 is manufactured with implanted high-speed, high-voltage and low resistance double-diffused MOS (DMOS) process, and was designed to drive DMOS and other analog switches. The devices are available in 16-pin plastic DIP package and in a die form for hybrid applications. Custom devices based on SD5300 can also be ordered. ORDERING INFORMATION Part SD5300Y SD5300N XSD5300 Package SOIC Plastic DIP Sorted Chips in Carriers Temperature Range -55oC to +125oC -55oC to +125oC -55oC to +125oC
* Low Propagation Time . . . . . . . . . . . . . . . . . . . . . . . * Low On Resistance Insertion Loss * Low Capacitance * Low * *
- Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . 3.6pF typ. - Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6pF typ. - Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6pF typ. Low Crosstalk . . . . . . . . . . . . . . . . . . . . -107dB @ 4kHz Input Transient Protection
APPLICATION
* Analog Switch Driver * Wide Band Dual Differential Amplifiers
FUNCTIONAL BLOCK DIAGRAM
DUAL IN LINE PACKAGE PIN CONFIGURATION
SO PIN CONFIGURATION
G1
TOP VIEW
S1
TOP VIEW
16 D4 15 N/C 14 G4 13 S4 12 S3 11 G 3 10 N/C 9 D3
D1
D1
1
S2
1
1 4 S1 13 NC 12 G 1 11 D 1 10 D 4 9 G4 8
SUBSTRATE 2
G2
Bo dy 2
G1 S1
S2
3 4 5 6
G2 3 D2 4 D3 5 G3 6 S3 7
D2
S2 G2
G3
N/C 7
S3
D3
D2
8
S4
G4
D4
S4 SUBSTRATE
CD9
SD5300
CORPORATION
ABSOLUTE MAXIMUM RATINGS
PARAMETER Breakdown Voltage Drain-Source Source-Drain Drain-Substrate Source-Substrate Gate-Source Gate-Substrate Gate-Drain Continuous Drain Current SYMBOL VDS VSD VDB VSB VGS VGB VGD ID MAX. VALUE 20 20 25 25 25 25/-.3 25 50 UNITS
ABSOLUTE MAXIMUM
PARAMETER Drain Current Temperature Range Operating Storage Power Dissipation Package Each Device SYMBOL ID MAX. VALUE 50 UNITS mA
o
V
TJ TS
-55 to +85 -55 to +150
C
mA
PD PD
640 (Note 1) 300 (Note 2)
mW
Notes: 1. Linear Derating Factor - 10.7mW/oC above 25oC 2. Linear Derating Factor - 5.0mW/oC above 25 oC
ELECTRICAL CHARACTERISTICS (TA = 25oC, unless otherwise noted)
SYMBOL BVDS BVSB IGBS VGS(th) PARAMETER Drain-Source Breakdown Voltage Source-Substrate Breakdown Voltage Gate-Body Leakage Current Gate-Source Threshold Voltage 0.5 40 r DS(on) Drain-Source ON Resistance 22 17 15 g fs c (ga+gd+gb) c (gd+db) c (gs+sb) c (dg) CT Common-Source Forward Transconductance Gate Node Capacitance Drain Node Capacitance Source Node Capacitance Reverse Transfer Capacitance Cross Talk 10 12 2.4 1.3 3.5 0.3 -107 3.7 1.7 4.5 .7 dB pF f = 1MHz, VDS = 10V, VGS = VBS = -15V MIN 20 20 TYP 25 V 25 1.0 2.0 45 25 20 17 mmhos ohms A V IS = 10A, VGS = 0, Drain Open VGB = 25V, VDB = VSB = 0 VDS = VGS, I D = 1.0A, VSB = 0 VGS = 5V, I D = 1mA, VSB = 0 VGS = 10V, ID = 1mA, VSB = 0 VGS = 15V, ID = 1mA, VSB = 0 VGS = 20V, ID = 1mA, VSB = 0 VDS = 10V, ID = 20mA, f = 1KHz, VSB = 0 MAX UNITS CONDITIONS ID = 10A, VGS = VBS = 0
SD5300
CORPORATION
SWITCHING CHARACTERISTICS
SYMBOL td(on) tr toff * PARAMETER Turn-on Time Rise Time Turn-off Time MIN TYP 0.7 0.8 10.0 MAX 1.5 1.5 ns UNITS CONDITIONS RL = 680, RG = 51 VDD = 5V V G(on) = 10V
* t off is dependent on RL and C and does not depend on the device characteristics.
TEST CIRCUIT
TO SCOPE +V DD
SWITCHING WAVEFORM
+5V
RL VOUT TO SCOPE
90% 50% 10%
51
VIN OV
VIN
Td (ON) +V DD VOUT OV
Input Pulse t r , t p <1nec Rep rate = 1MHz Sampling Scope t r <350psec RIN = 1M CIN = 2pF
90% 50% 10% tr 10%
90%
t OFF

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